Title :
Improved extraction method for effective channel length of deep-submicrometre MOSFETs
Author :
Lee, S. ; Youn, S.
Author_Institution :
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin Kyungki-Do, South Korea
Abstract :
An improved method for extracting the effective channel length in deep-submicrometre MOSFETs using S-parameter sets of real devices with different mask gate length is developed to overcome the drawbacks of a conventional low-frequency C-V method. This improved method is based on the accurate determination of the inversion channel capacitance using a new technique to remove parasitic overlap and fringe capacitances.
Keywords :
MOSFET; S-parameters; capacitance; masks; S-parameter; channel length; deep-submicrometer MOSFETs; extraction method; fringe capacitances; inversion channel capacitance; low-frequency C-V method; mask gate length; parasitic overlap;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040162
