• DocumentCode
    906607
  • Title

    Improved extraction method for effective channel length of deep-submicrometre MOSFETs

  • Author

    Lee, S. ; Youn, S.

  • Author_Institution
    Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin Kyungki-Do, South Korea
  • Volume
    40
  • Issue
    4
  • fYear
    2004
  • Firstpage
    274
  • Lastpage
    276
  • Abstract
    An improved method for extracting the effective channel length in deep-submicrometre MOSFETs using S-parameter sets of real devices with different mask gate length is developed to overcome the drawbacks of a conventional low-frequency C-V method. This improved method is based on the accurate determination of the inversion channel capacitance using a new technique to remove parasitic overlap and fringe capacitances.
  • Keywords
    MOSFET; S-parameters; capacitance; masks; S-parameter; channel length; deep-submicrometer MOSFETs; extraction method; fringe capacitances; inversion channel capacitance; low-frequency C-V method; mask gate length; parasitic overlap;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040162
  • Filename
    1269504
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=906607