Microstore - The Stanford Analog Memory Unit

An NMOS device has been developed which provides high speed analog signal storage and readout for time expansion of transient signals. This device takes advantage of HMOS-1 VLSI technology to implement an array of 256 storage cells. Sequential samples of an input waveform can be taken every 5 ns while providing an effective sampling aperture time of less than 1 ns. The design signal-to-noise ratio is 1 part in 2000. Digital control circuitry is provided on the chip for controlling the read-in and read-out processes. A reference circuit is incorporated in the chip for first order compensation of leakage drifts, sampling pedestals, and temperature effects.