DocumentCode
906754
Title
Substrate current in silicon p-channel MOS transistors
Author
Ryan, R.D.
Volume
57
Issue
8
fYear
1969
Firstpage
1424
Lastpage
1425
Abstract
Substrate currents are observed in silicon p-channel MOSFET devices. These currents are similar to those observed in n-channel MOSFETs but have a markedly higher threshold voltage.
Keywords
Acoustic beams; Current density; Dispersion; Electron beams; Equations; MOSFETs; Particle beams; Plasmas; Silicon; Threshold voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1969.7282
Filename
1449212
Link To Document