Title :
Substrate current in silicon p-channel MOS transistors
Abstract :
Substrate currents are observed in silicon p-channel MOSFET devices. These currents are similar to those observed in n-channel MOSFETs but have a markedly higher threshold voltage.
Keywords :
Acoustic beams; Current density; Dispersion; Electron beams; Equations; MOSFETs; Particle beams; Plasmas; Silicon; Threshold voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1969.7282
