• DocumentCode
    906781
  • Title

    High-precision MOS current mirror

  • Author

    Akiya, M. ; Nakashima, S.

  • Author_Institution
    Nippon Telegraph and Telephone Public Corporation, Atsugi Electrical Communication Laboratories, Atsugi, Japan
  • Volume
    131
  • Issue
    5
  • fYear
    1984
  • fDate
    10/1/1984 12:00:00 AM
  • Firstpage
    170
  • Lastpage
    175
  • Abstract
    Matching accuracies of current mirrors using SIMOX technology are discussed. The variation in matching errors has been both qualitatively and quantitatively analysed for MOS current mirrors. Matching errors at low operating currents are dominated by variations in threshold voltage and are inversely proportional to the drain current. In high-current operations, however, they are not dependent on drain current and are dominated by variations in channel length and width. Using 10 ¿m-channel-length devices, matching error less than 0.6% with 100 ¿A drain current is obtained without any compensation circuits. MOS current mirrors have been found to present greater advantages for low-current operation, such as higher matching accuracy and a smaller pattern area than similar bipolar current mirrors.
  • Keywords
    field effect integrated circuits; reference circuits; MOS current mirror; SIMOX technology; high-current operations; low-current operation; matching errors; monolithic IC; reference circuits;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1984.0043
  • Filename
    4643798