DocumentCode
906781
Title
High-precision MOS current mirror
Author
Akiya, M. ; Nakashima, S.
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Atsugi Electrical Communication Laboratories, Atsugi, Japan
Volume
131
Issue
5
fYear
1984
fDate
10/1/1984 12:00:00 AM
Firstpage
170
Lastpage
175
Abstract
Matching accuracies of current mirrors using SIMOX technology are discussed. The variation in matching errors has been both qualitatively and quantitatively analysed for MOS current mirrors. Matching errors at low operating currents are dominated by variations in threshold voltage and are inversely proportional to the drain current. In high-current operations, however, they are not dependent on drain current and are dominated by variations in channel length and width. Using 10 ¿m-channel-length devices, matching error less than 0.6% with 100 ¿A drain current is obtained without any compensation circuits. MOS current mirrors have been found to present greater advantages for low-current operation, such as higher matching accuracy and a smaller pattern area than similar bipolar current mirrors.
Keywords
field effect integrated circuits; reference circuits; MOS current mirror; SIMOX technology; high-current operations; low-current operation; matching errors; monolithic IC; reference circuits;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1984.0043
Filename
4643798
Link To Document