DocumentCode :
906858
Title :
Influence of coupled plasmon-polar optical phonon modes on the mobility of electrons in GaAs
Author :
Moglestue, C.
Author_Institution :
GEC, Research Laboratories, Hirst Research Centre, Wembley, UK
Volume :
131
Issue :
6
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
188
Lastpage :
192
Abstract :
By means of time-dependent perturbation theory, the rate for the scattering of electrons from coupled plasmon-polar optical phonon modes has been derived. This rate has been expressed in a form suitable for Monte-Carlo particle modelling. The mobility of electrons in bulk GaAs has been simulated by means of this technique, both with and without the plasmon-phonon coupled modes. Although the scattering from the coupled modes is stronger than from uncoupled phonons, the energy interval over which coupled-mode scattering takes place is small. The reduction in mobility due to coupled plasmon-phonon modes is of the order of a few per cent and peaks at 1 MV m¿1.
Keywords :
III-V semiconductors; Monte Carlo methods; carrier mobility; gallium arsenide; perturbation theory; phonon-plasmon interactions; GaAs; III-V semiconductor; Monte-Carlo particle modelling; coupled plasmon-polar optical phonon modes; electron mobility; electron scattering rate; plasmon-phonon coupled modes; time-dependent perturbation theory;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Publisher :
iet
ISSN :
0143-7100
Type :
jour
DOI :
10.1049/ip-i-1.1984.0046
Filename :
4643805
Link To Document :
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