Title :
MBE GaAs impatt diodes with reduced drift region for mm-wave frequencies
Author :
Zhang, X. ; Freyer, J. ; Weimann, G. ; Schlapp, W.
Author_Institution :
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik D-8000, Mÿnchen, West Germany
fDate :
12/1/1984 12:00:00 AM
Abstract :
The electron drift velocity in GaAs has been investigatd at high electric fields for dependence on temperature. MBE GaAs Impatt diodes with reduced drift region have been fabricated for 50 and 60 GHz. The results show that the lower value of electron drift velocity of 2.8 to 3.5 × 106 cm/s instead of 6.5 × 106 cm/s at 500 K should be applied in the design of GaAs Impatt diodes for mm-wave frequencies.
Keywords :
III-V semiconductors; IMPATT diodes; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; 50 GHz; 60 GHz; GaAs Impatt diodes; MBE; MM-wave frequencies; electron drift velocity; high electric fields; reduced drift region;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1984.0048
