• DocumentCode
    906896
  • Title

    MBE GaAs impatt diodes with reduced drift region for mm-wave frequencies

  • Author

    Zhang, X. ; Freyer, J. ; Weimann, G. ; Schlapp, W.

  • Author_Institution
    Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik D-8000, Mÿnchen, West Germany
  • Volume
    131
  • Issue
    6
  • fYear
    1984
  • fDate
    12/1/1984 12:00:00 AM
  • Firstpage
    203
  • Lastpage
    206
  • Abstract
    The electron drift velocity in GaAs has been investigatd at high electric fields for dependence on temperature. MBE GaAs Impatt diodes with reduced drift region have been fabricated for 50 and 60 GHz. The results show that the lower value of electron drift velocity of 2.8 to 3.5 × 106 cm/s instead of 6.5 × 106 cm/s at 500 K should be applied in the design of GaAs Impatt diodes for mm-wave frequencies.
  • Keywords
    III-V semiconductors; IMPATT diodes; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; 50 GHz; 60 GHz; GaAs Impatt diodes; MBE; MM-wave frequencies; electron drift velocity; high electric fields; reduced drift region;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1984.0048
  • Filename
    4643809
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=906896