DocumentCode :
906906
Title :
Microwave Dielectric Properties of an Amorphous Semiconductor System (Letters)
Author :
Wilson, L.K. ; Reilly, G. T O ; Kinser, D.L.
Volume :
22
Issue :
4
fYear :
1974
fDate :
4/1/1974 12:00:00 AM
Firstpage :
470
Lastpage :
471
Abstract :
Experimental results arepresented for the microwave dielectric properties of the glass system (x) As2Te3(1 - x)As2Se3 under temperature and compositional variations. The results indicate that the material exhibits potentially useful microwave properties.
Keywords :
Amorphous semiconductors; Argon; Dielectric materials; Electromagnetic heating; Frequency; Gases; Glass; Ionization; Semiconductor device noise; Temperature;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1974.1128258
Filename :
1128258
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=906906
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