X-Ray Absorption Spectroscopy Study of Annealing Effect on Co-Implanted ZnO Epitaxial Films

Author

Liao, Y.F. ; Huang, T.W. ; Huang, J.C.A. ; Lee, C.H.

Author_Institution

Dept. of Eng. & Syst. Sci., Nat. Tsing-Hua Univ., Hsinchu

Volume

45

Issue

6

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

2431

Lastpage

2434

Abstract

Room temperature diluted ferromagnetic semiconductor is a very promising candidate for spintronics applications. In this work, we present the cobalt ion implanted ZnO epitaxial thin film under controlled annealing temperature to investigate the origin of ferromagnetism in this system. For the as-implanted sample a metallic cobalt cluster was observed. After annealing at 700^degC, the Co atoms were to substitute the Zn sites of the ZnO matrix and exhibited a spontaneous room temperature ferromagnetism. However the XMCD measurements on the annealed samples show the cobalt element is almost paramagnetism at 26 K. The result might indicate oxygen vacancies caused ferromagnetism of intrinsic dilute magnetic semiconductors in the sample of the Co-implanted ZnO.

Keywords

II-VI semiconductors; X-ray absorption spectra; annealing; doping profiles; ferromagnetic materials; ion implantation; magnetic epitaxial layers; magnetoelectronics; semiconductor doping; semiconductor epitaxial layers; semimagnetic semiconductors; vacancies (crystal); wide band gap semiconductors; zinc compounds; X-ray absorption spectroscopy; ZnO:Co; annealing effect; doping; epitaxial film; intrinsic dilute magnetic semiconductors; ion implantation; oxygen vacancies; paramagnetism; room temperature diluted ferromagnetic semiconductor; spintronics application; temperature 26 K; temperature 293 K to 298 K; temperature 700 C; Co-doped ZnO; magnetic circular dichroism (XMCD); magnetic semiconductors;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2009.2018598

Filename

4957814