Evolution of Stress With Film Thickness in Co Films on InP(001)

Author

Park, Yong-Sung ; Jeong, Jong-Ryul ; Jeong, Jong Seok ; Lee, Jeong Yong ; Shin, Sung-Chul

Author_Institution

Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Daejeon

Volume

45

Issue

6

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

2523

Lastpage

2526

Abstract

We investigated the stress evolution of a Co/InP(001) by a highly sensitive optical deflection-detecting system in an ultra high vacuum (UHV) chamber. Stress results are analyzed and discussed by correlating to the growth morphology obtained from scanning tunneling microscopy (STM) measurements and to the structure of the Co/InP obtained from high resolution transmission electron microscopy (HRTEM) measurements. Abrupt compressive stress, which is seen at the initial stage of the Co growth, might be due to the effect of the adsorption of Co on the InP. Subsequent tensile stress is closely related to the formation of continuous film by the coalescence of Co islands on the InP as shown in STM images. In addition, it is observed from HRTEM images that the lattice relaxation along the c-axis of hcp Co has an effect on tensile stress.

Keywords

III-V semiconductors; adsorption; cobalt; compressive strength; indium compounds; metallic thin films; scanning tunnelling microscopy; semiconductor-metal boundaries; stress relaxation; tensile strength; transmission electron microscopy; Co; HRTEM; InP; InP(001); adsorption; compressive stress; film thickness; growth morphology; high resolution transmission electron microscopy; optical deflection-detecting system; scanning tunneling microscopy; tensile stress relaxation; ultra high vacuum chamber; Compressive stress; high resolution transmission electron microscopy (HRTEM); scanning tunneling microscopy (STM); tensile stress;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2009.2018651

Filename

4957817