Title :
In situ study of electromigration by joule displacement microscopy
Author_Institution :
University College London, Department of Electronic & Electrical Engineering, London, UK
fDate :
2/1/1985 12:00:00 AM
Abstract :
The applicability of a novel scheme¿Joule displacement microscopy¿to the characterisation of electromigration is demonstrated. It involves the detection of local changes to electric resistivity. The relative influence of four parameters which govern the electromigration process-current density, temperature, and their spatial divergences, are examined. It is shown that it is thereby possible to understand the differences in the impact of electromigration observed in films of aluminium and gold.
Keywords :
electromigration; integrated circuit technology; laser beam applications; optical microscopy; Al; Au; IC technology; Joule displacement microscopy; current density; electric resistivity; electromigration; in situ study; laser beam application;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1985.0003
