DocumentCode
907034
Title
In situ study of electromigration by joule displacement microscopy
Author
Martin, Y.
Author_Institution
University College London, Department of Electronic & Electrical Engineering, London, UK
Volume
132
Issue
1
fYear
1985
fDate
2/1/1985 12:00:00 AM
Firstpage
9
Abstract
The applicability of a novel scheme¿Joule displacement microscopy¿to the characterisation of electromigration is demonstrated. It involves the detection of local changes to electric resistivity. The relative influence of four parameters which govern the electromigration process-current density, temperature, and their spatial divergences, are examined. It is shown that it is thereby possible to understand the differences in the impact of electromigration observed in films of aluminium and gold.
Keywords
electromigration; integrated circuit technology; laser beam applications; optical microscopy; Al; Au; IC technology; Joule displacement microscopy; current density; electric resistivity; electromigration; in situ study; laser beam application;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1985.0003
Filename
4643824
Link To Document