Title :
Theory of 1/f noise in bipolar silicon planar transistors
Author :
Martin, J.C. ; Esteve, Daniel ; Blasquez, G. ; Ribeyrol, J.M.
Author_Institution :
CRNS, Laboratoire d´Automatique et de ses Applications Spatiales, Toulouse, France
Abstract :
A theory of 1/f low-frequency noise in silicon planar transistors is developed. It relates this noise to fluctuations in base current produced by fluctuations of occupied traps in the silicon dioxide. It is shown that the theoretical relationship of noise is consistent with experiment.
Keywords :
bipolar transistors; noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700087
