• DocumentCode
    907064
  • Title

    Layout related deformations of meander-type MOS transistor I/V characteristics

  • Author

    Maly, W. ; Syrzycki, M.

  • Author_Institution
    Carnegie Mellon University, Department of Electrical & Computer Engineering, Pittsburgh, USA
  • Volume
    132
  • Issue
    1
  • fYear
    1985
  • fDate
    2/1/1985 12:00:00 AM
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    The I/V characteristics of an n-channel silicon-gate folded MOS transistor, having a large value of gate width/length ratio, has been investigated. Significant deformations of these characteristics are reported and an explanation of the observed inconsistency with typical transistor models is proposed.
  • Keywords
    insulated gate field effect transistors; I/V characteristics; gate width/length ratio; layout related deformations; meander-type MOS transistor; n-channel Si gate folded MOST;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1985.0004
  • Filename
    4643827
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=907064