Title :
Layout related deformations of meander-type MOS transistor I/V characteristics
Author :
Maly, W. ; Syrzycki, M.
Author_Institution :
Carnegie Mellon University, Department of Electrical & Computer Engineering, Pittsburgh, USA
fDate :
2/1/1985 12:00:00 AM
Abstract :
The I/V characteristics of an n-channel silicon-gate folded MOS transistor, having a large value of gate width/length ratio, has been investigated. Significant deformations of these characteristics are reported and an explanation of the observed inconsistency with typical transistor models is proposed.
Keywords :
insulated gate field effect transistors; I/V characteristics; gate width/length ratio; layout related deformations; meander-type MOS transistor; n-channel Si gate folded MOST;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1985.0004
