Title :
The properties of nickel in silicon
Author :
Ghandhi, Sorab K. ; Thiel, Frank L.
Author_Institution :
Rensselaer Polytechnic Institute, Troy, NY
Abstract :
This paper describes the properties of active nickel centers in silicon. In particular, the role of nickel in both increasing and reducing minority carrier lifetime in silicon integrated circuits is described, and an assessment made of its use in this application.
Keywords :
Charge carrier lifetime; Energy states; Furnaces; Gettering; Gold; Grain boundaries; Nickel; Silicon; Solids; Temperature;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1969.7323
