• DocumentCode
    907255
  • Title

    Simulation of near ballistic electron transport in a submicron GaAs diode with Alx Ga1-x As/GaAs heterojunction cathode

  • Author

    Tomizawa, K. ; Awano, Y. ; Hashizume, N. ; Kawashima, M.

  • Author_Institution
    Electrotechnical Laboratory of Japan, Niihari, Japan
  • Volume
    132
  • Issue
    1
  • fYear
    1985
  • fDate
    2/1/1985 12:00:00 AM
  • Firstpage
    37
  • Lastpage
    41
  • Abstract
    A Monte-Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with an AlxGa1-x As/GaAs heterojunction cathode. The electric field in the diode is self-consistently determined by solving Poisson´s equation under reasonable boundary conditions. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field and average electron velocity, are computed. Based on these data, various properties of the electron transport in a submicron diode with a hot-electron injection mechanism are discussed.
  • Keywords
    III-V semiconductors; Monte Carlo methods; carrier density; gallium arsenide; hot carriers; semiconductor diodes; AlxGa1-xAs/GaAs heterojunction cathode; Monte-Carlo simulation; Poisson´s equation; ballistic electron transport; electric field; electron density; electron energy; electron motion; electron velocity; hot-electron injection mechanism; submicron GaAs diode;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1985.0009
  • Filename
    4643843
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=907255