Material and process considerations for monolithic low-1/f-noise transistors

Oxide passivation, substrate orientation, transistor geometry, current density, and hFEwere evaluated for their effect on the 1/f noise spectrum of monolithic transistors. For verification of previous findings correlating 1/f noise with surface-state density, C-V measurements were made at 260 Hz and 0.1 MHz. Transistors fabricated on