Two-dimensional computer analysis of dielectric-surface-loaded GaAs bulk element

Computer analysis based on a 2-dimensional model was performed to investigate the effect of dielectric surface loading on the growth of dipole domains in a GaAs bulk element. The results show that a dipole domain originally produced by an inhomogeneity in GaAs is prevented from developing, as most of the space charges are concentrated near the surface boundary of GaAs by the presence of dielectric material.