Self-oscillation frequency characteristics of a GaAs/GaAlAs pn-pn laser

Experimental investigations have been performed on the frequency characteristics and the dynamic V/I characteristics of the GaAs/GaAlAs pn-pn negative resistance laser designed by the authors. The turn-on and turn-off properties of the device are analysed based on the charge-storage theory and the double-transistor model, which is in good agreement with the measured results. It is shown that, with an applied forward bias larger than the turn-on voltage, the self oscillation stimulated emission frequency is primarily determined by the charge storage in the two bases. The achievable self-oscillation stimulated emission frequency is up to 15 MHz. However, it is predicted that a much higher frequency can be obtained by improving the design in order to lower the turn-on voltage and to enhance the holding current.