Strategy for DC parameter extraction in bipolar transistors

An improved DC parameter-extraction methodology for bipolar transistors is presented. The method uses a new step-by-step strategy based on measurements made under two saturation conditions only: zero voltage and zero current. This method minimises the self-heating effects without using pulsed techniques, and it is suitable for medium-power devices. Special emphasis has been placed on the determination of resistive parameters. The proposed method fits better the experimental data than the parameter-extraction methodologies in use today. The relative r.m.s. error decreases from a value higher than 10% to 1% at high current levels