DocumentCode
907499
Title
Strategy for DC parameter extraction in bipolar transistors
Author
Ibarra, A. ; Gracia, J.
Author_Institution
Dept. de Inf., Fac. de Inf., San Sebastian, Spain
Volume
137
Issue
1
fYear
1990
fDate
2/1/1990 12:00:00 AM
Firstpage
5
Lastpage
11
Abstract
An improved DC parameter-extraction methodology for bipolar transistors is presented. The method uses a new step-by-step strategy based on measurements made under two saturation conditions only: zero voltage and zero current. This method minimises the self-heating effects without using pulsed techniques, and it is suitable for medium-power devices. Special emphasis has been placed on the determination of resistive parameters. The proposed method fits better the experimental data than the parameter-extraction methodologies in use today. The relative r.m.s. error decreases from a value higher than 10% to 1% at high current levels
Keywords
bipolar transistors; circuit analysis computing; semiconductor device models; DC parameter extraction; bipolar transistors; circuit simulation; medium-power devices; modelling; resistive parameters; saturation conditions; step-by-step strategy; zero current; zero voltage;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
217034
Link To Document