High-dynamic-range low-noise microwave amplifier

The operation of a high-dynamic-range parametric amplifier is described. The varactor is a GaAs p¿n junction with an n type layer suitable for operation as a K band transferred-electron oscillator (t.e.o.). A dynamic range of approximately 177 dB/Hz and a noise figure of less than 2 dB were measured at C band. The tests were made to show the feasibility of high-dynamic-range low-noise microwave amplification for radar-receiver applications, and to establish the feasibility of high-performance monolithic multifunction chips from the material standpoint.