Title :
A.M. noise of IMPATT-diode oscillators
Author_Institution :
Technische Hochschule Mÿnchen, Institut fÿr Technische Elektronik, Mÿnchen, West Germany
Abstract :
Based on a general oscillator model, noise spectra are calculated by a quasistationary method. From this, the reduction of the a.m. noise caused by adjusting the locus of the load circuit orthogonal to the curve of the device impedance is indicated and verified by experiments. The noise reduction generally is 5¿15 dB. Measurements of the a.m.-f.m.-noise-correlation coefficient confirm the results.
Keywords :
avalanche diodes; microwave oscillators; noise; transit time devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700174
