Title :
New method for determination of geometric dependences of submicrometre MOS transistor parameters
Author :
Wan, C.P. ; Sheu, B.J.
Author_Institution :
Ind. Sci. Inst., Univ. of Southern California, Los Angeles, CA, USA
fDate :
8/1/1990 12:00:00 AM
Abstract :
A new and simple method using device simulation results to determine the geometric dependences of the zero-bias threshold voltage and body-effect coefficient for submicrometre MOS transistors is presented. No a priori geometric shape of the bulk depletion region is assumed. The threshold-voltage reduction and body-effect coefficient were experimentally determined to have a linear and exponential dependence on 1/Leff, respectively, for submicrometre LDD MOS transistors with effective channel length as small as 0.22 μm
Keywords :
digital simulation; insulated gate field effect transistors; semiconductor device models; LDD; body-effect coefficient; device simulation; effective channel length; exponential dependence; geometric dependences; submicrometre MOS transistor parameters; threshold-voltage reduction; zero-bias threshold voltage;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
