Title :
Bumpless monotonic bicubic interpolation for MOSFET device modelling
Author_Institution :
Toshiba Corporation, R & D Centre, Kawasaki, Japan
fDate :
6/1/1985 12:00:00 AM
Abstract :
A bumpless monotonic bicubic interpolation (MBI) technique is proposed. The method is applied to MOSFET device modelling for guessing at a very smooth interpolated curved surface. Monotonic increase in a two-dimensional surface can be held, even if the actual device characteristics show steepest change, like punchthrough characteristics. The technique can be utilised for very small number micron and/or submicron VLSI MOSFET device modelling.
Keywords :
VLSI; circuit analysis computing; digital simulation; field effect integrated circuits; insulated gate field effect transistors; interpolation; semiconductor device models; MOSFET device modelling; bumpless monotonic bicubic interpolation; micron dimensions; simulation; smooth interpolated curved surface; submicron VLSI;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1985.0030
