• DocumentCode
    908070
  • Title

    Electrical characterisation of the insulating property of Ta2 O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequency C/V technique

  • Author

    Hwu, J.-G. ; Lin, S.-T.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    137
  • Issue
    5
  • fYear
    1990
  • fDate
    10/1/1990 12:00:00 AM
  • Firstpage
    390
  • Lastpage
    396
  • Abstract
    The measurement of equivalent low-frequency capacitance is used as an efficient method to monitor the insulating properties of Ta2 O5 in Al-Ta2O5-SiO2-Si (MTOS) structures. It is found however, that MTOS devices having normal high-frequency C/V characteristics can have significantly different behaviour at low frequencies. A technique is proposed in this work that enables the quality of the Ta2O 5 preparation to be determined. Examples showing the importance of the measurement of the equivalent low-frequency capacitance are also given
  • Keywords
    aluminium; capacitance measurement; insulating thin films; metal-insulator-semiconductor structures; silicon; silicon compounds; tantalum compounds; Al-Ta2O5-SiO2-Si capacitors; Ta2O5; Ta2O5 preparation; equivalent low-frequency capacitance; high-frequency C/V characteristics; low-frequency C/V technique;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings G
  • Publisher
    iet
  • ISSN
    0956-3768
  • Type

    jour

  • Filename
    217100
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=908070