Title :
Electrical characterisation of the insulating property of Ta2 O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequency C/V technique
Author :
Hwu, J.-G. ; Lin, S.-T.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
10/1/1990 12:00:00 AM
Abstract :
The measurement of equivalent low-frequency capacitance is used as an efficient method to monitor the insulating properties of Ta2 O5 in Al-Ta2O5-SiO2-Si (MTOS) structures. It is found however, that MTOS devices having normal high-frequency C/V characteristics can have significantly different behaviour at low frequencies. A technique is proposed in this work that enables the quality of the Ta2O 5 preparation to be determined. Examples showing the importance of the measurement of the equivalent low-frequency capacitance are also given
Keywords :
aluminium; capacitance measurement; insulating thin films; metal-insulator-semiconductor structures; silicon; silicon compounds; tantalum compounds; Al-Ta2O5-SiO2-Si capacitors; Ta2O5; Ta2O5 preparation; equivalent low-frequency capacitance; high-frequency C/V characteristics; low-frequency C/V technique;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
