• DocumentCode
    908183
  • Title

    Oxide breakdown in a metal-SiO2-Si capacitor: influence of the metal electrode

  • Author

    Sarrabayrouse, G. ; Prom, J.L. ; Kassmi, K.

  • Author_Institution
    Lab. d´´Autom. et d´´Anal. des Syst., Toulouse, France
  • Volume
    137
  • Issue
    6
  • fYear
    1990
  • fDate
    12/1/1990 12:00:00 AM
  • Firstpage
    475
  • Lastpage
    478
  • Abstract
    The influence of the metal electrode, size, type and thickness on the breakdown field strength of a metal-SiO2-Si capacitor with an insulating layer less than 100 Å thick is investigated. The results are interpreted in terms of stress at the SiO2-Si interface
  • Keywords
    aluminium; chromium; electric breakdown of solids; elemental semiconductors; metal-insulator-semiconductor devices; metallisation; semiconductor technology; silicon; silicon compounds; 30 to 130 Å; Al-SiO2-Si capacitor; Cr-SiO2-Si; Fowler-Nordheim injection; MOS capacitor; Oxide breakdown; breakdown field strength; insulating layer; interface stress; metal electrode; metal-SiO2-Si capacitor; two-step metallisation;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings G
  • Publisher
    iet
  • ISSN
    0956-3768
  • Type

    jour

  • Filename
    217115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=908183