Title :
Oxide breakdown in a metal-SiO2-Si capacitor: influence of the metal electrode
Author :
Sarrabayrouse, G. ; Prom, J.L. ; Kassmi, K.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., Toulouse, France
fDate :
12/1/1990 12:00:00 AM
Abstract :
The influence of the metal electrode, size, type and thickness on the breakdown field strength of a metal-SiO2-Si capacitor with an insulating layer less than 100 Å thick is investigated. The results are interpreted in terms of stress at the SiO2-Si interface
Keywords :
aluminium; chromium; electric breakdown of solids; elemental semiconductors; metal-insulator-semiconductor devices; metallisation; semiconductor technology; silicon; silicon compounds; 30 to 130 Å; Al-SiO2-Si capacitor; Cr-SiO2-Si; Fowler-Nordheim injection; MOS capacitor; Oxide breakdown; breakdown field strength; insulating layer; interface stress; metal electrode; metal-SiO2-Si capacitor; two-step metallisation;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
