A Novel Silicon-Embedded Toroidal Power Inductor With Magnetic Core

Author

Xiangming Fang ; Rongxiang Wu ; Lulu Peng ; Sin, Johnny K. O.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

34

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

292

Lastpage

294

Abstract

In this letter, a novel post-CMOS silicon-embedded toroidal power inductor with an MnZn ferrite composite core is proposed and demonstrated. The inductor is accommodated within the groove at the backside of a Si chip and connected to the front-side IC through vias for area saving, electromagnetic interference suppression, and large power-handling capability. A 2.9-mm² embedded inductor with an inductance of 43.6 nH and a peak Q-factor of 16.2 is fabricated. It achieves a saturation current of 10 A, making it promising for on-chip light-emitting diode driver applications.

Keywords

CMOS integrated circuits; Q-factor; driver circuits; electromagnetic interference; elemental semiconductors; ferrite devices; inductors; interference suppression; light emitting diodes; magnetic cores; manganese compounds; power supply circuits; silicon; three-dimensional integrated circuits; MnZn; Q-factor; Si; area saving; current 10 A; electromagnetic interference suppression; embedded inductor; front-side IC through vias; integrated circuit; large power-handling capability; magnetic core; on-chip light-emitting diode driver; post-CMOS silicon-embedded toroidal power inductor with an; saturation current; Inductance; Inductors; Magnetic cores; Silicon; Substrates; Toroidal magnetic fields; Windings; DC–DC power conversion; integrated inductor; monolithic inductors; power supply-on-a-chip (PowerSoC);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2234077

Filename

6410333