Title :
Modelling of the sidegating and the backgating effects in GaAs MESFETs
Author_Institution :
Dept. of Electr. & Comp. Eng., Victoria Univ., BC, Canada
fDate :
12/1/1990 12:00:00 AM
Abstract :
Sidegating and backgating effects affect the I/V characteristics of a GaAs MESFET built on SI substrates. The basic charge trapping, process can be related to current flowing through the channel substrate interface. This effectively changes the channel thickness. For the side-gating effect, the observed voltage threshold for current pinch-off is explained by the breakdown of a parasitic lateral npn transistor. An equivalent circuit model is put forward to include the sidegating and backgating effects. Reasonable results have been obtained during simulation
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; interface electron states; semiconductor device models; GaAs; MESFET; backgating effects; breakdown; charge-trapping; current pinch-off; equivalent circuit model; npn transistor; observed voltage threshold; parasitic lateral transistor; side-gating effect; simulation;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
