Title :
Influence of ionising irradiation on the channel mobility of MOS transistors
Author :
Bellaouar, A. ; Sarrabayrouse, G. ; Rossel, P.
Author_Institution :
Centre National de la Recherche Scientifique, Laboratoire d´´Automatique et d´´Analyse des Systÿmes, Toulouse, France
fDate :
8/1/1985 12:00:00 AM
Abstract :
The influence of an ionising irradiation on the channel mobility of a MOS transistor is experimentally investigated as a function of both the oxide layer thickness and the electric field in the insulating layer during irradiation. The previously proposed empirical formula for the dependency of the low field mobility on the created charge is made more precise.
Keywords :
carrier mobility; insulated gate field effect transistors; radiation effects; MOS transistors; channel mobility; electric field; ionising irradiation; low field mobility; oxide layer thickness;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1985.0040
