Title :
Recent datareviews from EMIS. Resistivity of n-type and p-type crystalline silicon, doping dependence
Author_Institution :
GEC Research Laboratories Ltd., Hirst Research Centre, Wembley, UK
fDate :
8/1/1985 12:00:00 AM
Keywords :
Hall effect; boron; electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; phosphorus; silicon; Hall effect; Si:B; Si:P; capacitance voltage; dopant concentration; dopant density; elemental semiconductors; four point probe measurements; resistivity;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1985.0042
