• DocumentCode
    908334
  • Title

    Recent datareviews from EMIS. Resistivity of n-type and p-type crystalline silicon, doping dependence

  • Author

    Pawlik, M.

  • Author_Institution
    GEC Research Laboratories Ltd., Hirst Research Centre, Wembley, UK
  • Volume
    132
  • Issue
    4
  • fYear
    1985
  • fDate
    8/1/1985 12:00:00 AM
  • Firstpage
    195
  • Keywords
    Hall effect; boron; electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; phosphorus; silicon; Hall effect; Si:B; Si:P; capacitance voltage; dopant concentration; dopant density; elemental semiconductors; four point probe measurements; resistivity;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1985.0042
  • Filename
    4643950
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=908334