Title :
Small signal bias dependent model for high frequency transistors
Author :
Kumar, K. Bharath
Author_Institution :
Indian Telephone Industries Ltd., Analog Laboratory, Transmission R & D, Bangalore, India
fDate :
10/1/1985 12:00:00 AM
Abstract :
Equivalent circuits for two high-frequency transistors in the range 40¿1200 MHz have been determined. The circuit is extended for different bias conditions by varying certain parameters of the model.
Keywords :
bipolar transistors; equivalent circuits; semiconductor device models; bias conditions; bipolar transistor; equivalent circuits; frequency 40 to 1200 MHz; high frequency transistors; n-p-n planar epitaxial transistors; small signal bias dependent model;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1985.0045
