Title :
Diffusion in semiconductors
Author :
Hasan, Md Maodudul ; Venkateswaran, Subramanian
Author_Institution :
Indian Institute of Technology, Department of Electrical Engineering, Kanpur, India
Abstract :
When the concentration of diffusing impurity in a semiconductor approaches or exceeds the intrinsic concentration of electrons or holes at the temperature of diffusion, the resulting partial differential equation becomes nonlinear. A computer program has been prepared to obtain the profile of the diffused impurity for such a situation.
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700257
