DocumentCode :
908870
Title :
A numerical analysis of the resurf diode structure
Author :
Walker, P. ; Davies, J.T. ; Nuttall, K.I.
Author_Institution :
University of Liverpool, Department of Electrical Engineering and Electronics, Liverpool, UK
Volume :
132
Issue :
6
fYear :
1985
fDate :
12/1/1985 12:00:00 AM
Firstpage :
285
Lastpage :
290
Abstract :
The results of a 2-dimensional numerical analysis of medium and high-voltage diode structures that incorporate a `resurf¿ field reduction layer are presented. The work illustrates the effect of surface charge on the optimisation of the design and indicates the requirements that will ensure bulk breakdown for a wide range of surface charge densities. The results are used to assess the analytical design equation presented by Appels et al., modified to take account of surface charge. A comparison is also made with results obtained from an analysis of the field limiting ring technique, and the relative performance of the two methods is assessed.
Keywords :
electric breakdown of solids; numerical analysis; semiconductor diodes; 2-dimensional numerical analysis; analytical design equation; bulk breakdown; design optimisation; field limiting ring technique; field reduction layer; high-voltage diode structures; resurf diode structure; surface charge densities;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Publisher :
iet
ISSN :
0143-7100
Type :
jour
DOI :
10.1049/ip-i-1.1985.0064
Filename :
4644012
Link To Document :
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