Title :
Theory for power output and efficiency of silicon TRAPATT oscillators
Author_Institution :
Plessey Co., Allen Clark Research Centre, Towcester, UK
Abstract :
A TRAPATT analysis is employed to obtain theoretical results for the efficiency and power output of silicon p+-n-n+ avalanche diodes at different frequencies. This is done for a range of doping densities and depletion-layer widths, and enables detailed design curves to be deduced.
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700268
