• DocumentCode
    908924
  • Title

    Auger recombination in a quantum-well-heterostructure laser

  • Author

    Taylor, R.I. ; Abram, R.A. ; Smith, C. ; Burt, M.G.

  • Author_Institution
    University of Durham, Department of Applied Physics and Electronics, Durham, UK
  • Volume
    132
  • Issue
    6
  • fYear
    1985
  • fDate
    12/1/1985 12:00:00 AM
  • Firstpage
    364
  • Lastpage
    370
  • Abstract
    The problem of Auger recombination of electrons and holes in a quantum-well heterostructure is considered. We derive an expression for the Auger recombination rate for the CHSH process, with the carriers involved remaining in their ground-state subbands. We make the usual approximations of parabolic isotropic bandstructures, and assume Boltzmann statistics are valid. Our results are used to obtain the ratio of the Auger recombination rates in quantum well and bulk structures, and the ratio obtained provides a useful extension of previous work. For quantum-well lasers at 1.3 ¿¿m and 1.55 ¿¿m, we find that the Auger recombination rates are similar to those found in the bulk, provided that the carrier concentrations in the quantum well and the bulk are the same.
  • Keywords
    Auger effect; electron-hole recombination; semiconductor junction lasers; semiconductor superlattices; 1.3 microns; 1.55 microns; Auger recombination; Boltzmann statistics; electron-hole recombination; ground-state subbands; parabolic isotropic bandstructures; quantum-well-heterostructure laser;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • DOI
    10.1049/ip-j.1985.0069
  • Filename
    4644019