Title :
Analytical theory of stable domains in high-doped Gunn diodes
Author :
Gelmont, B.L. ; Shur, Michael S.
Author_Institution :
Academy of Sciences of the USSR, A.F. loffe Physico-Technical Institute, Leningrad, USSR
Abstract :
The form, amplitude and width of the stable domain are determined analytically for the case of high doping level (n0 > 5.0×1015cm¿3).
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700269
