Low temperature polycrystalline silicon thin film transistor with silicon nitride ion stopper

Author

Kyung Ha Lee ; Young Min Jhon ; Hyuk Jin Cha ; Jin Jang

Author_Institution

Dept. of Phys., Kyung Hee Univ., Seoul, South Korea

Volume

17

Issue

6

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

258

Lastpage

260

Abstract

The authors have fabricated a new low temperature polycrystalline silicon (poly-Si) thin film transistor (TFT) with silicon nitride (SiN/sub x/) ion-stopper and laser annealed poly-Si. The fabricated poly-Si TFT using SiN/sub x/ as the ion-stopper as well as the gate insulator exhibited a field effect mobility of 110 cm²/Vs, subthreshold voltage of 5.5 V, subthreshold slope of 0.48 V/dec., and on/off current ratio of /spl sim/10⁶. Low off-state leakage current of 2.4×10/sup -2/ A/μm at the drain voltage of 5 V and the gate voltage of -5 V was achieved.

Keywords

carrier mobility; elemental semiconductors; leakage currents; silicon; silicon compounds; thin film transistors; -5 V; 3.5 V; 5 V; Si-SiN; drain voltage; field effect mobility; gate insulator; gate voltage; ion stopper; off-state leakage current; on/off current ratio; polysilicon; subthreshold slope; subthreshold voltage; thin film transistor; Active matrix liquid crystal displays; Annealing; Doping; Electrodes; Insulation; Plasma density; Plasma temperature; Silicon; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.496450

Filename

496450