Voltage-controlled negative resistance in p+-i-n+ planar diodes with injection gate

The electrical properties of Si p+-i-n+ diodes with a hole injecting gate are studied. The gate is placed between the anode (p+) and the cathode (n+). Under appropriate conditions of both the gate location and the positive gate voltage with respect to the cathode, these devices exhibit voltage-controlled negative resistance (VCNR). A phenomenological model for the occurrence of VCNR is proposed. The model considers the interaction between two p+-i-n+ diodes fabricated in the same substrate. Electrical characteristics are analysed on the basis of this model. The experimental results can be understood phenomenologically using the above model.