Title :
Analysis of optical writing mode in solid-state imaging devices with inherent MNOS memory
Author :
Ando, T. ; Yamasaki, H. ; Sugishita, T.
Author_Institution :
Shizuoka University, Research Institute of Electronics, Hamamatsu, Japan
fDate :
2/1/1986 12:00:00 AM
Abstract :
A model for optical writing in solid-state imaging devices with an inherent MNOS memory is presented. It is shown that writing under low light levels is highly enhanced by the use of a proper bias-charge (fat-zero). The optimum operating condition under which wide dynamic range can be realised without degradation of the writing is also derived. Experimental results from test elements support these theoretical predictions. Finally, erase characteristics of the MNOS analog memory are presented.
Keywords :
field effect integrated circuits; image sensors; semiconductor device models; semiconductor storage; MNOS memory; bias-charge; erase characteristics; fat zero; floating source FET; image sensors; low light levels; model; monolithic IC; optical writing mode; optimum operating condition; solid-state imaging devices; wide dynamic range;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1986.0002
