DocumentCode
909000
Title
An epitaxial GaAs field-effect transistor
Author
Shapiro, J.S.
Volume
57
Issue
11
fYear
1969
Firstpage
2085
Lastpage
2086
Abstract
Fabrication and measurement of an experimental GaAs FET are described. Evaporated Au-Ge-Ni contacts and nickel Schottky barrier were used. Scattering parameters were measured to 1 GHz and utilized for circuit design.
Keywords
Cadmium; Electron tubes; FETs; Gallium arsenide; Helium; Laser stability; Laser transitions; Power lasers; Reservoirs; Temperature;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1969.7481
Filename
1449411
Link To Document