Oxynitride gate dielectric grown in nitric oxide (NO): the effect of reoxidation on dielectric reliability of the active edge

Author

Maiti, Bikas ; Tobin, Philip J. ; Okada, Yoshio ; Reid, Kimberly G. ; Ajuria, Sergio A. ; Hegde, Rama I. ; Kaushik, Vidya

Author_Institution

Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA

Volume

17

Issue

6

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

279

Lastpage

281

Abstract

Reoxidation of an oxynitride gate dielectric grown by NO anneal of thermal oxide has been studied. This process has demonstrated /spl sim/3-5X improvement of Q/sub BD/ of active edge intensive capacitors in comparison to thermal oxide, N/sub 2/O and NO oxynitride. This improvement is believed to be due to the reduction of local thinning of the gate dielectric at the field oxide edge which also reduces local build-up of positive charge near the gate electrode at the isolation edges.

Keywords

MIS devices; annealing; dielectric thin films; electric breakdown; integrated circuit reliability; oxidation; semiconductor device reliability; NO; NO anneal; Si-SiNO; active edge charge-to-breakdown; active edge intensive capacitors; dielectric reliability; field oxide edge; gate dielectric growth; isolation edges; local thinning reduction; oxynitride gate dielectric; positive charge buildup reduction; reoxidation; thermal oxide annealing; Annealing; Design for quality; Dielectric substrates; Electrodes; Laboratories; MOS capacitors; Thermal degradation; Thermal stresses; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.496457

Filename

496457