DocumentCode
909061
Title
Isolation process dependence of channel mobility in thin-film SOI devices
Author
Huang, Cheng-Liang ; Soleimani, Hamid ; Grula, Greg ; Arora, Narain D. ; Antoniadis, Dimitri
Author_Institution
Digital Equipment Corp., Hudson, MA, USA
Volume
17
Issue
6
fYear
1996
fDate
6/1/1996 12:00:00 AM
Firstpage
291
Lastpage
293
Abstract
Degradation of NMOS and enhancement of PMOS I-V characteristics are found to be dependent on specific isolation processes in thin-film SOI devices. These variations are due to mobility decrease in NMOS and increase in PMOS, which can be attributed to the isolation-process-related compressive strain of the silicon film. Magnitudes of mobility variation as high as 40% are observed in the affected SOI devices.
Keywords
CMOS integrated circuits; MOSFET; ULSI; carrier mobility; isolation technology; silicon-on-insulator; thin film transistors; LOCOS; MESA; NMOS I-V characteristics; PMOS I-V characteristics; Si; Si film; channel mobility; compressive strain; isolation process dependence; thin-film SOI devices; CMOS process; CMOS technology; Capacitive sensors; Implants; Isolation technology; MOS devices; Semiconductor films; Silicon on insulator technology; Thin film devices; Ultra large scale integration;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.496461
Filename
496461
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