Title :
Lateral insulated gate p-i-n transistor (LIGPT)-a new MOS gate lateral power device
Author_Institution :
Power Electron. Center, Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fDate :
6/1/1996 12:00:00 AM
Abstract :
A new insulated gate power device suitable for thin silicon-on-insulator (SOI) application is described and verified through two-dimensional numerical simulation. The lateral insulated gate p-i-n transistor (LIGPT) has a much superior current carrying capability than that of the lateral insulated gate bipolar transistor (LIGBT) because it conducts like a p-i-n diode. Because a new turn-off mechanism is employed, the LIGPT also demonstrates a very large gate turn-off capability. These two major advantages; coupled with other advantages such as latch-up free, make the LIGPT a very promising device for use in power integrated circuits on SOI.
Keywords :
MIS devices; power field effect transistors; power integrated circuits; silicon-on-insulator; MOS gate lateral power device; current carrying capability; gate turnoff capability; insulated gate power device; lateral insulated gate p-i-n transistor; power integrated circuits; thin SOI application; turnoff mechanism; two-dimensional numerical simulation; Cathodes; Dielectric substrates; Insulated gate bipolar transistors; Insulation; MOSFETs; Numerical simulation; P-i-n diodes; PIN photodiodes; Silicon on insulator technology; Voltage;
Journal_Title :
Electron Device Letters, IEEE
