Title :
Temperature-sensitivity analysis of 1360-nm dilute-nitride quantum-well lasers
Author :
Yeh, Jeng-Ya ; Tansu, Nelson ; Mawst, Luke J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI, USA
fDate :
3/1/2004 12:00:00 AM
Abstract :
The N-content of an InGaAsN quantum-well (QW) laser is found to dramatically affect the temperature sensitivity of the current injection efficiency (ηinj) and material gain parameter (goJ). The increased temperature sensitivity of ηinj and goJ of InGaAsN QW lasers with increasing N-content leads to a significant increase in their temperature sensitivity of threshold current and external differential quantum efficiency. Increasing the N-content of the InGaAsN QW potentially results in a reduction of the heavy hole confinement, which may account for the increased temperature sensitivity of the current injection efficiency.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; thermo-optical effects; 1360 nm; InGaAsN; InGaAsN quantum-well laser; current injection efficiency; dilute-nitride quantum-well lasers; external differential quantum efficiency; heavy hole confinement; temperature sensitivity; thermionic carrier leakage; threshold current; Chemical lasers; Chemical vapor deposition; Fiber lasers; MOCVD; Molecular beam epitaxial growth; Nitrogen; Optical materials; Quantum well lasers; Temperature sensors; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.823715
