Title :
Nitride-based LEDs with textured side walls
Author :
Chang, C.S. ; Chang, S.J. ; Su, Y.K. ; Lee, C.T. ; Lin, Y.C. ; Lai, W.C. ; Shei, S.C. ; Ke, J.C. ; Lo, H.M.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Taiwan, Taiwan
fDate :
3/1/2004 12:00:00 AM
Abstract :
Nitride-based light-emitting diodes (LEDs) with textured side walls were fabricated. By using plasma-enhanced chemical vapor deposition SiO2 layer as the etching mask, we successfully etched the nitride epitaxial layers to achieve wavelike side walls. It was found that such wavelike side walls could mainly enhance the light output at the horizontal directions. With a 20-mA current injection, it was found that the output powers of the LED with textured side walls and normal LED were 9.3 and 8.4 mW, respectively. Furthermore, it was found that such textured side walls will not result in a higher operation voltage.
Keywords :
indium compounds; light emitting diodes; optical fabrication; plasma CVD; semiconductor epitaxial layers; ITO; InSnO; SiO2 layer; current injection; etching mask; nitride epitaxial layers; nitride-based LED; nitride-based light-emitting diodes; plasma-enhanced chemical vapor deposition; textured side walls; wavelike side walls; Chemical vapor deposition; Epitaxial layers; Etching; Gallium nitride; Light emitting diodes; Plasma applications; Plasma chemistry; Plasma waves; Quantum well devices; Refractive index;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.823768
