Title :
Additional doping in epitaxial silicon underlying a radio-frequency glow-discharge-deposited silicon-nitride layer
Author :
Günther, U. ; Quast, W.
Author_Institution :
Technische Hochschule Braunschweig, Institut fÿr Hochfrequenztechnik, Braunschweig, West Germany
Abstract :
A doping increase in epitaxial silicon under an r.f. glow-discharge-deposited silicon-nitride layer was observed using the m.i.s. capacitance. Experimental results leading to an interpretation are given.
Keywords :
epitaxial growth; metal-insulator-semiconductor structures; semiconductor doping; silicon;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700298
