• DocumentCode
    909204
  • Title

    Additional doping in epitaxial silicon underlying a radio-frequency glow-discharge-deposited silicon-nitride layer

  • Author

    Günther, U. ; Quast, W.

  • Author_Institution
    Technische Hochschule Braunschweig, Institut fÿr Hochfrequenztechnik, Braunschweig, West Germany
  • Volume
    6
  • Issue
    14
  • fYear
    1970
  • Firstpage
    425
  • Lastpage
    426
  • Abstract
    A doping increase in epitaxial silicon under an r.f. glow-discharge-deposited silicon-nitride layer was observed using the m.i.s. capacitance. Experimental results leading to an interpretation are given.
  • Keywords
    epitaxial growth; metal-insulator-semiconductor structures; semiconductor doping; silicon;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19700298
  • Filename
    4234795
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=909204