DocumentCode :
9093
Title :
Single- and Multiple-Event Induced Upsets in {\\rm HfO}_2/{\\rm Hf} 1T1R RRAM
Author :
Bennett, W.G. ; Hooten, N.C. ; Schrimpf, R.D. ; Reed, R.A. ; Mendenhall, Marcus H. ; Alles, Michael L. ; Jinshun Bi ; En Xia Zhang ; Linten, D. ; Jurzak, Malgorzata ; Fantini, Andrea
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Volume :
61
Issue :
4
fYear :
2014
fDate :
Aug. 2014
Firstpage :
1717
Lastpage :
1725
Abstract :
Single-event upsets in 1T1R Resistive Random Access Memory (RRAM) structures are experimentally demonstrated by generating current transients in the access transistors of the memory cells. The relationship between the single-event upset threshold of the RRAM and the applied voltage is exponential, which is verified using TPA laser analysis and heavy-ion irradiation. Multiple-Event Upsets (MEUs) also occur, where individual ions incrementally change the RRAM´s resistance until their cumulative effect causes an upset. Single-event models are presented that allow direct correlation of the voltage across the RRAM, caused by the ion-generated current transient, and the change in RRAM resistance. The RRAM is vulnerable only in the high resistance state, when a voltage capable of writing to the cell is applied to the bit line. This is approximately 0.5% of the memory element´s operation time, leading to relatively low projected upset rates.
Keywords :
hafnium compounds; radiation hardening (electronics); random-access storage; transients; 1T1R RRAM; 1T1R resistive random access memory structures; HfO2-Hf; MEU; RRAM resistance; TPA laser analysis; access transistors; current transients; heavy-ion irradiation; ion-generated current transient; memory cells; multiple-event induced upsets; single-event induced upsets; Electrical resistance measurement; Lasers; Measurement by laser beam; Resistance; Testing; Transient analysis; Transistors; ${bf HfO}_{bf 2}$; ${bf Hf}$; Cross section; RESET; SET; TPA; heavy ion; multiple event upset; resistive random access memory (RRAM); single event upset; state change; two photo absorption;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2014.2321833
Filename :
6870449
Link To Document :
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