Title :
Recovery of hot-carrier damage in reoxidized nitrided oxide MOSFET´s
Author :
Doyle, Brian S. ; Dunn, G.J.
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
Abstract :
Recovery of channel hot-carrier damage in reoxidized nitrided oxide (RNO) n- and p-MOSFETs is examined. It is found that recovery is substantially greater in RNO versus conventional oxide (CO) devices, particularly for p-MOSFETs. The authors believe this recovery is due to the detrapping of electrons trapped in the nitridation-induced traps near the substrate interface. The more rapid recovery of the hot-carrier damage in RNO devices will produce greater circuit lifetime improvements over conventional oxides than predicted by accelerated static high-voltage tests.<>
Keywords :
hot carriers; insulated gate field effect transistors; nitridation; oxidation; N/sub x/Si/sub y/O/sub z/ films; RNO; channel hot carrier damage recovery; electron detrapping; nitridation-induced traps; reoxidised nitrided oxide MOSFETs; Circuit testing; Electron traps; Hot carrier effects; Hot carriers; Interface states; Laboratories; MOSFET circuits; Silicon; Stress; Voltage;
Journal_Title :
Electron Device Letters, IEEE
