• DocumentCode
    909389
  • Title

    Internal current gain in microwave-biased gallium-doped silicon 8-14 µm IR detectors

  • Author

    Walker, B.J.

  • Volume
    57
  • Issue
    12
  • fYear
    1969
  • Firstpage
    2167
  • Lastpage
    2168
  • Abstract
    It has been shown that internal current gain may be obtained by the application of microwave bias to intrinsic photoconductors. This letter presents experimental evidence of the same effect in an extrinsic photoconductor, gallium-doped silicon.
  • Keywords
    Admittance; Conductors; Frequency; Impedance; Infrared detectors; Klystrons; Oscilloscopes; Photoconductivity; Silicon; Transfer functions;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1969.7517
  • Filename
    1449447
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=909389