Title :
Fabrication of substrate-independent hybrid distributed Bragg reflectors using metallic wafer bonding
Author :
Lin, H.C. ; Cheng, K.Y.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fDate :
3/1/2004 12:00:00 AM
Abstract :
A novel hybrid distributed Bragg reflector (DBR) consisting of a substrate-independent amorphous Si-Al-oxide stack and a Cr-Au-Ni-AuGe metallic bonding layer is developed for optoelectronic applications. The metal layers serve as a high-reflectance mirror as well as an adhesion material used in wafer bonding. The hybrid DBR utilizing the reflective metals can achieve a reflectivity of above 99.95% in merely six periods. In addition, the hybrid DBR can adjoin heterogeneous materials at a low temperature of 320/spl deg/C using a simple metallic bonding process. The hybrid DBR has been successfully applied to the fabrication of 1.55-μm GaInAsP-InP vertical-cavity surface-emitting laser cavities on Si substrates.
Keywords :
III-V semiconductors; adhesive bonding; aluminium alloys; arsenic compounds; chromium; distributed Bragg reflectors; elemental semiconductors; gallium compounds; germanium alloys; gold; gold alloys; indium compounds; infrared spectra; metal-insulator boundaries; metallic thin films; microcavity lasers; nickel; optical fabrication; optoelectronic devices; reflectivity; semiconductor lasers; semiconductor-insulator boundaries; silicon; surface emitting lasers; wafer bonding; 1.55 mum; 1.55-/spl mu/m GaInAsP-InP vertical-cavity surface emitting laser cavities; 320 degC; Cr-Au-Ni-AuGe metallic bonding layer; Cr-Au-Ni-AuGe-Si; GaInAsP-InP; InP; Si; Si substrates; adhesion material; high-reflectance mirror; metal layers; metallic wafer bonding; optoelectronic applications; reflective metals; reflectivity; substrate-independent amorphous Si-Al-oxide stack; substrate-independent hybrid distributed Bragg reflectors fabrication; Adhesives; Amorphous materials; Distributed Bragg reflectors; Inorganic materials; Mirrors; Optical device fabrication; Optical materials; Reflectivity; Vertical cavity surface emitting lasers; Wafer bonding;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.823735
