Title :
Accurate calculation of small-signal growth rates in avalanche diodes
Author_Institution :
University College London, Department of Electronic & Electrical Engineering, London, UK
Abstract :
The small-signal oscillation frequency and growth rate is calculated for an avalanche diode having a general doping profile, allowing for accurate drift velocity and ionisation rate. The analysis includes the case of a typical microwave load connected to the diode. A connection is found between this accurate growth rate and a properly defined Q factor for the whole circuit.
Keywords :
avalanche diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700328
