Title :
GaAs n+ ip+ in+ barrier transistor with ultra-thin p+AlGaAs base prepared by molecular beam epitaxy
Author :
Liu, W.C. ; Wang, Y.H. ; Chang, C.Y. ; Liao, S.A.
Author_Institution :
National Cheng Kung University, Institute of Electrical and Computer Engineering, Semiconductor and System Laboratories, Tainan, Republic of China
fDate :
4/1/1986 12:00:00 AM
Abstract :
A GaAs n+ ip+ in+ bulk barrier transistor with an ultra-thin p+Al0.2Ga0.8 As base was fabricated by molecular beam epitaxy. It is found that the barrier height can be modified by the ΔEc for the conduction band barrier and by the ΔEv for the valence band barrier, in addition to the planar doped bulk barrier. Both the base-emitter bias voltage and the incident light intensity can modulate the collector current.
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; GaAs n+ i¿ p+ i n+ barrier transistor; barrier height; base-emitter bias voltage; bipolar transistor; collector current; conduction band barrier; incident light intensity; molecular beam epitaxy; planar doped bulk barrier; ultra-thin p+ AlGaAs base; valence band barrier; Semiconductor devices and materials, Epitaxy;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1986.0010
